Electrical properties of Pt/SrBi2Ta2O9/Ta2O5/Si ferroelectric gate structure

We propose the Pt/SrBi2Ta2O9/Ta2O5/Si structure using Ta2O5 as the buffer layer for the application of non-destructive read-out memory. The Ta2O5 films were deposited oil p-type Si (100) substrates by rf-magnetron sputtering and the SrBi2Ta2O9 films were deposited by metal organic deposition (MOD) method. Coercive field that decisively affects the memory window becomes greater by inserting the Ta2O5 buffer laver between ferroelectric thin film and silicon substrate and thus the memory window also increases with an electric field to the SrBi2Ta2O9. The C-V characteristics of the Pt/SrBi2Ta2O9 (195 nm)/Ta2O5 (36 nm)/Si structure shows memory window of 0.5-2.7 V at the applied voltage of 3-7 V. The leakage current density is 1.7 x 10(-8) A/cm(2), even at the high voltage of 10 V.