Photoelectric properties and stability of the single-layer transition metal dichalcogenides under three stress states

被引:8
|
作者
Wang, Duo [1 ]
Yang, Lu [1 ]
机构
[1] Shenyang Univ Technol, Sch Architecture & Civil Engn, Shenyang 110870, Liaoning, Peoples R China
来源
MODERN PHYSICS LETTERS B | 2022年 / 36卷 / 01期
基金
中国国家自然科学基金;
关键词
Single-layer MoS2; single-layer WS2; strain; first-principle; ELECTRONIC-PROPERTIES; MAGNETIC-PROPERTIES; STRAIN; MOS2; WS2;
D O I
10.1142/S0217984921505321
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper, the electrical and optical properties of single-layer MoS2 and single-layer WS2 in three strain states: biaxial tension, biaxial compression, biaxial tension and compression are systematically studied. All calculations are based on the first-principle of density functional theory. The results show that after biaxial tension strain, biaxial compression strain, and biaxial tension-compression strain are applied, the atomic structure, energy band structure, and optical absorption coefficient will show disparate changing trends. When the biaxial tension and compression strain intensity is less than 15%, the bond length, bond angle, and light absorption peak will have little fluctuation with the increase of strain intensity. However, compared with the other two strain states, these two crystal structures are the most volatile at this time. In addition, when 15% biaxial tensile strain is applied, the two crystals can still maintain their kinetic stability.
引用
收藏
页数:11
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