Optoelectronics with single layer group-VIB transition metal dichalcogenides

被引:16
|
作者
Khan, M. A. [1 ,2 ,3 ]
Leuenberger, Michael N. [1 ,2 ]
机构
[1] Univ Cent Florida, NanoSci Technol Ctr, Orlando, FL 32826 USA
[2] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA
[3] Fed Urdu Univ Arts Sci & Technol, Dept Appl Phys, Islamabad, Pakistan
关键词
2D materials; transition metal dichalcogenides; defects; optoelectronics; QUANTUM CRYPTOGRAPHY; VALLEY POLARIZATION; PHOTON SOURCES; MOS2; PHOTOLUMINESCENCE; HETEROSTRUCTURES; EMITTERS; DEFECTS;
D O I
10.1515/nanoph-2018-0041
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The discovery of two-dimensional (2D) materials has opened up new frontiers and challenges for exploring fundamental research. Recently, single-layer (SL) transition metal dichalcogenides (TMDCs) have emerged as candidate materials for electronic and optoelectronic applications. In contrast to graphene, SL TMDCs have sizable band gaps that change from indirect to direct in SLs, which is useful in making thinner and more efficient electronic devices, such as transistors, photodetectors, and electroluminescent devices. In addition, SL TMDCs show strong spin-orbit coupling effects at the valence band edges, giving rise to the observation of valley-selective optical excitations. Here, we review the basic electronic and optical properties of pure and defected group-VIB SL TMDCs, with emphasis on the strong excitonic effects and their prospect for future optoelectronic devices.
引用
收藏
页码:1589 / 1600
页数:12
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