Doping diamonds and diamond films for electronic applications

被引:0
|
作者
Kalish, R [1 ]
机构
[1] Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel
[2] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel
来源
关键词
diamond; doping; p-type; n-type; CVD; ion-implantation;
D O I
10.4028/www.scientific.net/MSF.287-288.97
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Diamond exhibits extraordinary physical and chemical properties, many of which have already found application in tribology, thermal management and optics. Furthermore, diamond is also a wide-bandgap semiconductor which, when doped, can lead to the realization of electronic and optoelectronic devices with exceptional properties. Diamond can now be doped p-type, with boron, both during CVD diamond film growth and by ion-implantation, and n-type with phosphorus during CVD growth. This paper reviews the current status of diamond doping and describes the electronic properties of the doped layers. Some potential applications of doped semiconducting diamond are described.
引用
收藏
页码:97 / 106
页数:10
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