Doping and interface of homoepitaxial diamond for electronic applications

被引：0
|
作者：
Satoshi Yamasaki
Etienne Gheeraert
Yasuo Koide
机构：
[1] National Institute of Advanced Industrial Science and Technology,
[2] University of Grenoble Alpes,undefined
[3] Institut NEEL,undefined
[4] National Institute for Materials Science,undefined
来源：
MRS Bulletin | 2014年 / 39卷
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摘要：
Diamond has been attracting the attention of many researchers because of its potential for new applications such as in quantum devices and power electronics. These applications are enabled by the progress made in improving the quality of undoped, boron-doped, and phosphorus-doped diamond films grown by chemical vapor deposition techniques. Recent progress in diamond film growth and heterostructures of diamond and other compound semiconductors to realize these electronics applications are reported.
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页码：499 / 503
页数：4
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