Radiation hard InGaP for high efficiency multi-junction solar cells

被引：0

作者：

Khan, A ^{[1
]}

Yamaguchi, M ^{[1
]}

Bourgoin, JC ^{[1
]}

Takamoto, T ^{[1
]}

机构：

[1] Toyota Technol Inst, Nagoya, Aichi 4688511, Japan

来源：

2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 2000年

关键词：

D O I：

10.1109/ISCS.2000.947133

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Present study demonstrates isothermal and injection annealing recovery of photovoltaic parameters in InGaP solar cells after 1 MeV electron irradiation and correlation with changes in the Deep Level Transient Spectroscopy (DLTS) spectra observed in p-InGaP. In particular, the dominant hole level H2 (0.50-0.55 eV) is found to be significantly decay as a result of 40 days room temperature storage. In addition, a minority-carrier injection-enhanced annealing of the trap H2 has also been observed. Furthermore, an evidence of large minority carrier capture cross section for the hole trap H2 has been obtained by double-carrier pulse DLTS which demonstrate the role of this trap act as an apparent recombination center.

引用

页码：85 / 90

页数：6

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