Electrical conductivity of ceramics of SiC-AIN, SiC-BeO Al2O3 in the temperature range 300-1800 K

被引：2

作者：

Avrov, DD ^{[1
]}

Bakin, AS ^{[1
]}

Dorozhkin, SI ^{[1
]}

Rastegaev, VP ^{[1
]}

Tairov, YM ^{[1
]}

Bilalov, BA ^{[1
]}

Safaraliev, GK ^{[1
]}

Shabanov, SA ^{[1
]}

Lebedev, AO ^{[1
]}

机构：

[1] St Petersburg Electrotech Univ, St Petersburg, Russia

来源：

1998 HIGH-TEMPERATURE ELECTRONIC MATERIALS, DEVICES AND SENSORS CONFERENCE | 1998年

关键词：

D O I：

10.1109/HTEMDS.1998.730697

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrophysical properties of SiC-AlN, SiC-BeO, Al2O3 ceramics at high temperatures were investigated. Samples of ceramics were obtained by hot-pressure method. Our investigation shows, that specific resistance at 300 K is: 10(12) Ohm.cm, 10(9) Ohm.cm, 10(7) Ohm.cm for SiC-BeO ceramics contain 0.5%, 1.0%, and 2.0% BeO respectively; 10(12) Ohm.cm, 10(8) Ohm.cm 10(6) Ohm.cm for SiC-AlN ceramics containing 50% and more, 20% and 10% AIN respectively; 10(12) Ohm.cm for Al2O3. The specific resistance of all these ceramics at ceramics composition. Composition of SIC-AIN 1500 K is about 10 Ohm.cm.

引用

页码：196 / 198

页数：3

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