Electrical conductivity of ceramics of SiC-AIN, SiC-BeO Al2O3 in the temperature range 300-1800 K

被引：2
|
作者：
Avrov, DD [1 ]
Bakin, AS [1 ]
Dorozhkin, SI [1 ]
Rastegaev, VP [1 ]
Tairov, YM [1 ]
Bilalov, BA [1 ]
Safaraliev, GK [1 ]
Shabanov, SA [1 ]
Lebedev, AO [1 ]
机构：
[1] St Petersburg Electrotech Univ, St Petersburg, Russia
来源：
1998 HIGH-TEMPERATURE ELECTRONIC MATERIALS, DEVICES AND SENSORS CONFERENCE | 1998年
关键词：
D O I：
10.1109/HTEMDS.1998.730697
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electrophysical properties of SiC-AlN, SiC-BeO, Al2O3 ceramics at high temperatures were investigated. Samples of ceramics were obtained by hot-pressure method. Our investigation shows, that specific resistance at 300 K is: 10(12) Ohm.cm, 10(9) Ohm.cm, 10(7) Ohm.cm for SiC-BeO ceramics contain 0.5%, 1.0%, and 2.0% BeO respectively; 10(12) Ohm.cm, 10(8) Ohm.cm 10(6) Ohm.cm for SiC-AlN ceramics containing 50% and more, 20% and 10% AIN respectively; 10(12) Ohm.cm for Al2O3. The specific resistance of all these ceramics at ceramics composition. Composition of SIC-AIN 1500 K is about 10 Ohm.cm.
引用
收藏
页码：196 / 198
页数：3
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