Electrical signatures of ferromagnetism in epitaxial FeSi2 nanowires

被引：6
|
作者：
Kim, T. [1 ]
Bird, J. P. [2 ]
机构：
[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[2] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA
来源：
APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 26期
基金：
美国国家科学基金会;
关键词：
SILICIDE NANOWIRES; NISI2; NANOWIRES; SI(001); MICROSCOPY; SI(110); GROWTH; FILMS;
D O I：
10.1063/1.3533400
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We perform electrical characterization of epitaxial FeSi2 nanowires (NWs) realized by reactive epitaxy. Typical resistance values exceed 100 k Omega, a high value that is attributed to the combined influence of interfacial scattering and process-related damage. Negative magnetoresistance due to weak localization, as well as hysteresis and anisotropic magnetoresistance, are also observed at low temperatures, confirming the ferromagnetic nature of these NWs. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3533400]
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页数：3
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