Bandgap modifications by lattice deformations in β-FeSi2 epitaxial films

被引：11

作者：

Terai, Y. ^{[1
]}

Noda, K. ^{[1
]}

Yoneda, K. ^{[1
]}

Udono, H. ^{[2
]}

Maeda, Y. ^{[3
]}

Fujiwara, Y. ^{[1
]}

机构：

[1] Osaka Univ, Div Mat & Mfg Sci, Grad Sch Engn, Suita, Osaka 5650871, Japan

[2] Ibaraki Univ, Grad Sch Sci & Engn, Ibaraki 3168511, Japan

[3] Kyoto Univ, Dept Energy Sci & Technol, Sakyo Ku, Kyoto 6068501, Japan

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 24期

关键词：

beta-FeSi2; PL; Photoreflectance; Bandgap modification; Lattice deformation; SEMICONDUCTING SILICIDES; ELECTRONIC-PROPERTIES; OPTICAL-PROPERTIES; TECHNOLOGY; SCIENCE;

D O I：

10.1016/j.tsf.2011.05.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The modifications of direct transition energies by lattice deformations were investigated in beta-FeSi2 epitaxial films, polycrystal films and single crystal, systematically. The lattice deformations depending on thermal annealing temperature (T-a) were observed in beta-FeSi2 epitaxial films. In photoreflectance (PR) measurements, the direct transition energies of the epitaxial films shifted to lower energies as the Ta increased. The polycrystal films did not show the lattice deformation and the shift of direct transition energies. These results show that the direct bandgap is modified by the lattice deformation originating from the lattice mismatch at the hetero-interface of beta-FeSi2/Si. (C) 2011 Elsevier B. V. All rights reserved.

引用

页码：8468 / 8472

页数：5

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