Bandgap modifications by lattice deformations in β-FeSi2 epitaxial films

被引：11

作者：

Terai, Y. ^{[1
]}

Noda, K. ^{[1
]}

Yoneda, K. ^{[1
]}

Udono, H. ^{[2
]}

Maeda, Y. ^{[3
]}

Fujiwara, Y. ^{[1
]}

机构：

[1] Osaka Univ, Div Mat & Mfg Sci, Grad Sch Engn, Suita, Osaka 5650871, Japan

[2] Ibaraki Univ, Grad Sch Sci & Engn, Ibaraki 3168511, Japan

[3] Kyoto Univ, Dept Energy Sci & Technol, Sakyo Ku, Kyoto 6068501, Japan

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 24期

关键词：

beta-FeSi2; PL; Photoreflectance; Bandgap modification; Lattice deformation; SEMICONDUCTING SILICIDES; ELECTRONIC-PROPERTIES; OPTICAL-PROPERTIES; TECHNOLOGY; SCIENCE;

D O I：

10.1016/j.tsf.2011.05.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The modifications of direct transition energies by lattice deformations were investigated in beta-FeSi2 epitaxial films, polycrystal films and single crystal, systematically. The lattice deformations depending on thermal annealing temperature (T-a) were observed in beta-FeSi2 epitaxial films. In photoreflectance (PR) measurements, the direct transition energies of the epitaxial films shifted to lower energies as the Ta increased. The polycrystal films did not show the lattice deformation and the shift of direct transition energies. These results show that the direct bandgap is modified by the lattice deformation originating from the lattice mismatch at the hetero-interface of beta-FeSi2/Si. (C) 2011 Elsevier B. V. All rights reserved.

引用

页码：8468 / 8472

页数：5

共 50 条

[21] Optical functions and their empirical modeling for β-FeSi2 thin epitaxial films on Si(111)
Galkin, NG
Maslov, AM
[J]. PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 2001, 7-8 : 67 - 76
[22] Effect of ion beam modifications on the surface and structural properties of β-FeSi2 thin films
Tatar, Beyhan
Kutlu, Kubilay
Ruergen, Mustafa
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (19) : 5995 - 5999
[23] Electronic structure and simulation of the dielectric function of β-FeSi2 epitaxial films on Si(111)
N. G. Galkin
A. M. Maslov
A. O. Talanov
[J]. Physics of the Solid State, 2002, 44 : 714 - 719
[24] Growth of β-FeSi2 thin films on β-FeSi2 (110) substrates by molecular beam epitaxy
Muroga, M.
Suzuki, H.
Udono, H.
Kikuma, I.
Zhuravlev, A.
Yamaguchib, K.
Yamamoto, H.
Terai, T.
[J]. THIN SOLID FILMS, 2007, 515 (22) : 8197 - 8200
[25] Spectroscopic characterization of β-FeSi2 single crystals and homoepitaxial β-FeSi2 films by XPS and XAS
Esaka, F.
Yamamoto, H.
Udono, H.
Matsubayashi, N.
Yamaguchi, K.
Shamoto, S.
Magara, M.
Kimura, T.
[J]. APPLIED SURFACE SCIENCE, 2011, 257 (07) : 2950 - 2954
[26] Preparation and properties of FeSi, α-FeSi2 and β-FeSi2 single crystals
[J]. 1600, Elsevier Science S.A., Lausanne, Switzerland (219): : 1 - 2
[27] GALVANOMAGNETIC BEHAVIOR OF SEMICONDUCTING FESI2 FILMS
VALASSIADES, O
DIMITRIADIS, CA
WERNER, JH
[J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (02) : 890 - 893
[28] Analysis of Co and Cr dopants in epitaxial films of β-FeSi2 by ERDA, RBS, EDX and AES
Bohne, W
Reinsperger, GU
Röhrich, J
Schöpke, A
Selle, B
Sieber, I
Stauss, P
Urban, I
[J]. FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY, 1999, 365 (1-3): : 258 - 262
[29] Analysis of Co and Cr dopants in epitaxial films of β-FeSi2 by ERDA, RBS, EDX and AES
W. Bohne
G.-U. Reinsperger
J. Röhrich
A. Schöpke
B. Selle
I. Sieber
P. Stauß
I. Urban
[J]. Fresenius' Journal of Analytical Chemistry, 1999, 365 : 258 - 262
[30] Temperature dependence of direct transition energies in β-FeSi2 epitaxial films on Si(111) substrate
Noda, K.
Terai, Y.
Yoneda, K.
Fujiwara, Y.
[J]. ASIA-PACIFIC CONFERENCE ON SEMICONDUCTING SILICIDES SCIENCE AND TECHNOLOGY TOWARDS SUSTAINABLE OPTOELECTRONICS (APAC-SILICIDE 2010), 2011, 11 : 181 - 184

← 1 2 3 4 5 →