STRUCTURAL AND ELECTRICAL INVESTIGATION OF AN EPITAXIAL METALLIC FESI2 - PHASE ON SI (111)

被引：0
|
作者：
ONDA, N [1 ]
HENZ, J [1 ]
MULLER, E [1 ]
VONKANEL, H [1 ]
SCHWARZ, C [1 ]
PIXLEY, RE [1 ]
机构：
[1] UNIV ZURICH,INST PHYS,CH-8001 ZURICH,SWITZERLAND
来源：
HELVETICA PHYSICA ACTA | 1991年 / 64卷 / 02期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
An epitaxial FeSi2 phase of cubic symmetry has been grown on Si (111) by molecular beam epitaxy (MBE). Reflection high energy electron diffraction (RHEED) and high-resolution transmission electron microscopy (TEM) suggest the phase to have CaF2 structure. Ultraviolet photoelectron spectroscopy (UPS) and resistivity measurements show that the phase is metallic and undergoes an irreversible metal / semiconductor transition to the beta-FeSi2 phase at a temperature depending on the thickness of the films.
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页码：197 / 198
页数：2
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