Temperature dependence of dark current mechanisms in long-wavelength arsenic doped HgCdTe photovoltaic devices

被引：0

作者：

Liang, Jian ^{[1
]}

Hu, Weida ^{[1
]}

Pan, Jianzhen ^{[1
]}

Ye, Zhenhua ^{[1
]}

Lin, C. ^{[1
]}

Chen, Xiaoshuang ^{[1
]}

Lu, Wei ^{[1
]}

机构：

[1] Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China

来源：

35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010) | 2010年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simultaneous-mode nonlinear resistance-voltage curve fitting procedure is applied in the analysis of dark current mechanisms in long-wavelength arsenic doped HgCdTe photovoltaic devices at various temperatures. In order to explore the performance of the devices, six characteristic parameters as function of temperature are extracted from measured current-voltage curves by considering the dominant current mechanisms among diffusion, generation recombination, trap-assisted tunneling, band-to-band tunneling, and series resistance effect under different bias.

引用

页数：2

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