Temperature dependence of dark current mechanisms in long-wavelength arsenic doped HgCdTe photovoltaic devices

被引：0
|
作者：
Liang, Jian [1 ]
Hu, Weida [1 ]
Pan, Jianzhen [1 ]
Ye, Zhenhua [1 ]
Lin, C. [1 ]
Chen, Xiaoshuang [1 ]
Lu, Wei [1 ]
机构：
[1] Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China
来源：
35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010) | 2010年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simultaneous-mode nonlinear resistance-voltage curve fitting procedure is applied in the analysis of dark current mechanisms in long-wavelength arsenic doped HgCdTe photovoltaic devices at various temperatures. In order to explore the performance of the devices, six characteristic parameters as function of temperature are extracted from measured current-voltage curves by considering the dominant current mechanisms among diffusion, generation recombination, trap-assisted tunneling, band-to-band tunneling, and series resistance effect under different bias.
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页数：2
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