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Influence of temperature of storage, write and read operations on multiple level cells NAND flash memories

被引：3
|
作者：
Coutet, Julien [1 ,2 ]
Marc, Francois [2 ]
Dozolme, Flavien [1 ]
Guetard, Romain [1 ]
Janvresse, Aurelien [1 ]
Lebosse, Pierre [2 ]
Pastre, Antonin [2 ]
Clement, Jean-Claude [3 ]
机构：
[1] Thales Commun & Secur SAS, Labege, France
[2] Univ Bordeaux, Lab IMS, Talence, France
[3] Thales Res & Technol, Palaiseau, France
来源：
MICROELECTRONICS RELIABILITY | 2018年 / 88-90卷
关键词：
NAND flash memory; Reliability; Accelerated ageing; Data retention; MLC; RELIABILITY;
D O I：
10.1016/j.microrel.2018.06.088
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents an analysis of the reliability of 20 nm technology NAND Flash memory components based on Multiple Level Cells (MLC). The focus of the study is to assess the influence of temperature during programming, storage and reading operations. In order to reach this goal, several memories were programmed once at many temperatures ranging from -40 degrees C to 85 degrees C, then they have been stored powered off in one case and have been activated in reading in the other case, under different thermal stresses.
引用
收藏
页码：61 / 66
页数：6
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