Multiple Negative Differential Resistance Device by Using the Ambipolar Behavior of Tunneling Field Effect Transistor with Fast Switching Characteristics

被引：2

作者：

Jeong, Jae Won ^{[1
]}

Jang, E-San ^{[1
]}

Shin, Sunhae ^{[1
]}

Kim, Kyung Rok ^{[1
]}

机构：

[1] Ulsan Natl Inst Sci & Technol, Sch Elect & Comp Engn, Ulsan 689798, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2016年 / 16卷 / 05期

关键词：

Negative Differential Resistance (NOR); Tunneling Field Effect Transistor (TFET); Peak-to-Valley Current Ratio (PVCR); Tunneling; Ambipolar; Multipeak;

D O I：

10.1166/jnn.2016.12242

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We propose a novel double-peak negative differential resistance (NDR) characteristic at the conventional single-peak MOS-NDR circuit by employing ambipolar behavior of TFET. The fluctuated voltage transfer curve (VTC) from ambipolar inverter is analyzed with simple model and successfully demonstrated with TFET, as a practical example, on the device simulation. We also verified that the fluctuated VTC generates additional peak and valleys on NDR characteristics by using circuit simulations. Moreover, by adjusting the threshold voltage of conventional MOSFET, ultra-high 1st and 2nd peak-to-valley current ratio (PVCR) over 10(7) is obtained with fully suppressed valley currents. The proposed double-peak NDR circuit expected to apply on faster switching and low power multi-functional applications.

引用

页码：4753 / 4757

页数：5

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