CHARACTERISTICS WITH NEGATIVE DIFFERENTIAL RESISTANCE OF A DEVICE USING A SI-SIO2 STRUCTURE

被引：0
|
作者：
TIEN, ND [1 ]
机构：
[1] HANOI POLYTECH INST,MICROELECTR LAB,HANOI,VIETNAM
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 90卷 / 01期
关键词：
D O I：
10.1002/pssa.2210900166
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K103 / K105
页数：3
相关论文
共 50 条
  • [1] BAND STRUCTURE OF SI-SIO2
    KORZO, VF
    KIREEV, PS
    LYASHCHE.GA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (12): : 1545 - +
  • [2] Structure of the Si-SiO2 interface
    Plucinski, KJ
    EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY, 1999, 3725 : 191 - 195
  • [3] Structure and energetics of the Si-SiO2 interface
    Tu, Y
    Tersoff, J
    PHYSICAL REVIEW LETTERS, 2000, 84 (19) : 4393 - 4396
  • [4] STRUCTURE AND PROPERTIES OF THE SI-SIO2 INTERREGION
    HUBNER, K
    LECTURE NOTES IN PHYSICS, 1983, 175 : 221 - 229
  • [5] DIFFERENTIAL THERMAL ANALYSIS OF THE SI-SIO2 SYSTEM
    BREWER, L
    GREENE, FT
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (04) : 286 - 288
  • [6] Changes in Si-SiO2 structure characteristics generated by MeV electron irradiation
    Kaschieva, S.
    Christova, K.
    Dmitriev, S. N.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2009, 11 (10): : 1494 - 1497
  • [7] THE STRUCTURE OF SI-SIO2 AND (AU, PD) - SI INTERFACES
    KRIVANEK, OL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C388 - C388
  • [8] Observation of negative differential resistance in SiO2/Si heterostructures
    Jia, Lemin
    Zheng, Wei
    Huang, Feng
    CELL REPORTS PHYSICAL SCIENCE, 2021, 2 (11):
  • [9] ESP CENTERS OF PHOTOMEMORY IN THE SI-SIO2 STRUCTURE
    KARYAGIN, SN
    KURGANSKII, AV
    VESTNIK MOSKOVSKOGO UNIVERSITETA SERIYA 3 FIZIKA ASTRONOMIYA, 1981, 22 (06): : 69 - 70
  • [10] STRUCTURE OF THE DENSITY OF STATES AT THE SI-SIO2 INTERFACE
    PONOMAREV, AN
    PRIKHODKO, VG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (03): : 270 - 272
12345