Improvement of Resistive Switching Uniformity by Introducing a Thin GST Interface Layer

被引：55
|
作者：
Lv, Hangbing [1 ]
Wan, Haijun [2 ]
Tang, Tingao [2 ]
机构：
[1] Fudan Univ, Microelect Dept, Shanghai 200433, Peoples R China
[2] Fudan Univ, Microelect Dept, Shanghai 201203, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 09期
关键词：
Confined filament; resistive random access memory (RRAM); resistive switching;
D O I：
10.1109/LED.2010.2055534
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Broad dispersions of operation parameters are generally observed with continuous resistive switching. In this letter, we explore a prototype resistive random access memory (RRAM) device for switching uniformity improvement. Compared with Al/CuxO/Cu structure, by introducing a thin phase-change Ge2Sb2Te5 (GST) film between CuxO and Al top electrode, the device exhibits much better resistive hysteresis and switching uniformity. A combined filamentary conduction model is proposed to clarify the role of GST layer on the resistive switching stabilization.
引用
收藏
页码：978 / 980
页数：3
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