Improvement of Resistive Switching Uniformity by Introducing a Thin GST Interface Layer

被引：55
|
作者：
Lv, Hangbing [1 ]
Wan, Haijun [2 ]
Tang, Tingao [2 ]
机构：
[1] Fudan Univ, Microelect Dept, Shanghai 200433, Peoples R China
[2] Fudan Univ, Microelect Dept, Shanghai 201203, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 09期
关键词：
Confined filament; resistive random access memory (RRAM); resistive switching;
D O I：
10.1109/LED.2010.2055534
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Broad dispersions of operation parameters are generally observed with continuous resistive switching. In this letter, we explore a prototype resistive random access memory (RRAM) device for switching uniformity improvement. Compared with Al/CuxO/Cu structure, by introducing a thin phase-change Ge2Sb2Te5 (GST) film between CuxO and Al top electrode, the device exhibits much better resistive hysteresis and switching uniformity. A combined filamentary conduction model is proposed to clarify the role of GST layer on the resistive switching stabilization.
引用
收藏
页码：978 / 980
页数：3
相关论文
共 50 条
  • [21] Improvement of switching uniformity in Cu/SiO2/Pt resistive memory achieved by voltage prestress
    Liu, Chih-Yi
    Lin, Chao-Han
    Liu, Shin-Hung
    Bai, Chang-Zong
    Zhang, Yu-Xuan
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (03)
  • [22] Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device
    Xie, Hongwei
    Liu, Qi
    Li, Yingtao
    Lv, Hangbing
    Wang, Ming
    Liu, Xiaoyu
    Sun, Haitao
    Yang, Xiaoyi
    Long, Shibing
    Liu, Su
    Liu, Ming
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (12)
  • [23] Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure
    Prakash, Amit
    Maikap, Siddheswar
    Lai, Chao Sung
    Lee, Heng Yuan
    Chen, W. S.
    Chen, Frederick T.
    Kao, Ming Jer
    Tsai, Ming Jinn
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (04)
  • [24] Ionic Liquid Crystal Thin Film as Switching Layer in Nonvolatile Resistive Memory
    Zhang, Wenzhong
    Komatsu, Haruka
    Maruyama, Shingo
    Kaminaga, Kenichi
    Matsumoto, Yuji
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2023, 15 (45) : 52806 - 52813
  • [25] Atomic Layer Deposition of Transparent VOx Thin Films for Resistive Switching Applications
    Singh, Trilok
    Wang, Shuangzhou
    Aslam, Nabeel
    Zhang, Hehe
    Hoffmann-Eifert, Susanne
    Mathur, Sanjay
    [J]. CHEMICAL VAPOR DEPOSITION, 2014, 20 (7-9) : 291 - 297
  • [26] INTERFACE ENGINEERING IN RESISTIVE SWITCHING MEMORIES
    Wang, Sheng-Yu
    Tseng, Tseung-Yuen
    [J]. JOURNAL OF ADVANCED DIELECTRICS, 2011, 1 (02) : 141 - 162
  • [27] Improved Uniformity of Resistive Switching Behaviors in HfO2 Thin Films with Embedded Al Layers
    Yu, Shimeng
    Gao, Bin
    Dai, Haibo
    Sun, Bing
    Liu, Lifeng
    Liu, Xiaoyan
    Han, Ruqi
    Kang, Jinfeng
    Yu, Bin
    [J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (02) : H36 - H38
  • [28] OxRAM Resistive Switching for DR Improvement
    Kumar, Ashwani
    Sarkar, Mukul
    Suri, Manan
    [J]. 2018 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2018,
  • [29] Resistive switching characteristic and uniformity of low-power HfOx-based resistive random access memory with the BN insertion layer
    Su, Shuai
    Jian, Xiao-Chuan
    Wang, Fang
    Han, Ye-Mei
    Tian, Yu-Xian
    Wang, Xiao-Yang
    Zhang, Hong-Zhi
    Zhang, Kai-Liang
    [J]. CHINESE PHYSICS B, 2016, 25 (10)
  • [30] Resistive switching characteristic and uniformity of low-power HfOx-based resistive random access memory with the BN insertion layer
    苏帅
    鉴肖川
    王芳
    韩叶梅
    田雨仙
    王晓旸
    张宏智
    张楷亮
    [J]. Chinese Physics B, 2016, 25 (10) : 368 - 372
12345