Improvement of Resistive Switching Uniformity by Introducing a Thin GST Interface Layer

被引：55
|
作者：
Lv, Hangbing [1 ]
Wan, Haijun [2 ]
Tang, Tingao [2 ]
机构：
[1] Fudan Univ, Microelect Dept, Shanghai 200433, Peoples R China
[2] Fudan Univ, Microelect Dept, Shanghai 201203, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 09期
关键词：
Confined filament; resistive random access memory (RRAM); resistive switching;
D O I：
10.1109/LED.2010.2055534
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Broad dispersions of operation parameters are generally observed with continuous resistive switching. In this letter, we explore a prototype resistive random access memory (RRAM) device for switching uniformity improvement. Compared with Al/CuxO/Cu structure, by introducing a thin phase-change Ge2Sb2Te5 (GST) film between CuxO and Al top electrode, the device exhibits much better resistive hysteresis and switching uniformity. A combined filamentary conduction model is proposed to clarify the role of GST layer on the resistive switching stabilization.
引用
收藏
页码：978 / 980
页数：3
相关论文
共 50 条
  • [1] Improvement of Resistive Switching Uniformity by Introducing a Thin NbOx Interface Layer
    Liu, Xinjun
    Sadaf, Sharif Md.
    Kim, Seonghyun
    Biju, Kuyyadi P.
    Cao, Xun
    Son, Myungwoo
    Choudhury, Sakeb Hasan
    Jung, Gun-Young
    Hwang, Hyunsang
    [J]. ECS SOLID STATE LETTERS, 2012, 1 (05) : Q35 - Q38
  • [2] Improvement of resistive switching uniformity for TiO2-based memristive devices by introducing a thin HfO2 layer
    Jiang, Hao
    Xia, Qiangfei
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2013, 31 (06):
  • [3] Improvement of Resistive Switching Uniformity in TiOx Films by Nitrogen Annealing
    Li, Yingtao
    Wang, Yan
    Liu, Su
    Long, Shibing
    Lv, Hangbing
    Liu, Qi
    Wang, Qin
    Zhang, Sen
    Liu, Ming
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2011, 58 (03) : L407 - L410
  • [4] Improvement of Resistive Switching Performances in ZnLaO Film by Embedding a Thin ZnO Buffer Layer
    Xu, Dinglin
    Xiong, Ying
    Tang, Minghua
    Zeng, Baiwen
    Xiao, Yongguang
    Li, Jingqi
    Liu, Liu
    Yan, Shaoan
    Tang, Zhenhua
    Wang, Longhai
    Zhu, Xiaojian
    Li, Runwei
    [J]. ECS SOLID STATE LETTERS, 2013, 2 (09) : Q69 - Q71
  • [5] Improvement of resistive switching characteristics in SrZrO3 thin films with embedded Cr layer
    Lin, Chih-Yang
    Lin, Meng-Han
    Wu, Ming-Chi
    Lin, Chen-Hsi
    Tseng, Tseung-Yuen
    [J]. IEEE ELECTRON DEVICE LETTERS, 2008, 29 (10) : 1108 - 1111
  • [6] Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer
    Li, Yingtao
    Long, Shibing
    Lv, Hangbing
    Liu, Qi
    Wang, Yan
    Zhang, Sen
    Lian, Wentai
    Wang, Ming
    Zhang, Kangwei
    Xie, Hongwei
    Liu, Su
    Liu, Ming
    [J]. NANOTECHNOLOGY, 2011, 22 (25)
  • [7] Improvement of switching uniformity in HfOx-based resistive random access memory with a titanium film and effects of titanium on resistive switching behaviors
    Ban, Sanghyun
    Kim, Ohyun
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (06)
  • [8] Effect of Interface Layer Engineering on Resistive Switching Characteristics of ZrO2-Based Resistive Switching Devices
    Li, Yingtao
    Li, Xiaoyan
    Fu, Liping
    Chen, Rongbo
    Wang, Hong
    Gao, Xiaoping
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (12) : 5390 - 5394
  • [9] Radiation hardness of InWZno thin film as resistive switching layer
    Hsu, Chih-Chieh
    Ruan, Dun-Bao
    Liao, Kuei-Shu Chang
    Gan, Kai-Jhih
    Sze, Simon M.
    Liu, Po-Tsun
    [J]. APPLIED PHYSICS LETTERS, 2022, 120 (19)
  • [10] Atomic layer deposition of thin oxide films for resistive switching
    Froehlich, K.
    Jancovic, P.
    Hudec, B.
    Derer, J.
    Paskaleva, A.
    Bertaud, T.
    Schroeder, T.
    [J]. ATOMIC LAYER DEPOSITION APPLICATIONS 9, 2013, 58 (10): : 163 - 170
12345