Real-time x-ray studies of indium island growth kinetics

被引：1
|
作者：
Demasi, Alexander [1 ]
Rainville, Meliha G. [2 ]
Ludwig, Karl F., Jr. [1 ,2 ]
机构：
[1] Boston Univ, Dept Phys, Boston, MA 02215 USA
[2] Boston Univ, Div Mat Sci & Engn, Brookline, MA 02446 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2015年 / 33卷 / 02期
关键词：
IMPROVEMENT;
D O I：
10.1116/1.4905498
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The authors have investigated the early stages of indium island formation and growth by vapor phase deposition on room temperature sapphire using real-time grazing incidence small angle x-ray scattering (GISAXS), followed by ex-situ atomic force microscopy and scanning electron microscopy. The results are consistent with the formation and coalescence of hemispherical islands, as described by Family and Meakin. Monte Carlo simulations of systems of coalescing islands were used to supplement and quantify the results of GISAXS, and a good agreement is seen between the data and the simulations. (C) 2015 American Vacuum Society.
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页数：6
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