On the analysis of radiation-induced Single Event Transients on SRAM-based FPGAs

被引：10

作者：

Azimi, S. ^{[1
]}

Sterpone, L. ^{[1
]}

Du, B. ^{[1
]}

Boragno, L. ^{[1
]}

机构：

[1] Politecn Torino, Dipartimento Automat & Informat, Turin, Italy

来源：

MICROELECTRONICS RELIABILITY | 2018年 / 88-90卷

关键词：

Single Event Transients; SETs; Radiation effects; SRAM-based FPGA;

D O I：

10.1016/j.microrel.2018.07.135

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reliability of Integrated Circuits (ICs) is nowadays a major concern for sub-micron technologies especially when they are adopted in mission critical applications. This paper presents a methodology for accurate characterization of radiation-induced Single Event Transients (SETs) effects in SRAM-based Field Programmable Gate Arrays (FPGAs). A technique based on internal electrical pulse injection is proposed for emulating SET within logic resources of SRAM-based FPGAs. Experimental results provide detailed characterization of basic logic gates.

引用

页码：936 / 940

页数：5

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