High-Performance AlGaN/GaN Schottky Diodes With an AlGaN/AlN Buffer Layer

被引：60

作者：

Lee, Geng-Yen ^{[1
]}

Liu, Hsueh-Hsing ^{[1
]}

Chyi, Jen-Inn ^{[1
,2
,3
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Jhongli 32001, Taiwan

[2] Natl Cent Univ, Dept Opt & Photon, Jhongli 32001, Taiwan

[3] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 11期

关键词：

AlGaN/AlN buffer; AlGaN/GaN; Schottky barrier diodes (SBDs); BREAKDOWN VOLTAGE; SURFACE-STATES; GAN; DISLOCATIONS; RECTIFIERS;

D O I：

10.1109/LED.2011.2164610

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-performance AlGaN/GaN Schottky barrier diodes are fabricated on a composite AlGaN/AlN buffer layer with low screw-type and high edge-type dislocation densities. Without edge termination, the devices with 30-mu m anode-to-cathode spacing exhibit a high breakdown voltage (V-B) of 3489 V, a low leakage current (I-R) of less than 0.2 mu A at -2000 V, and a low specific on-resistance (R-on) of 7.9 m Omega . cm(2), resulting in a figure of merit (V-B(2)/R-on) as high as 1.54 GW/cm(2). Their switching characteristics as revealed by the reverse-recovery transient waveform exhibit a short reverse-recovery time of 17 ns.

引用

页码：1519 / 1521

页数：3

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