Defects in Schottky Diodes Based on AlGaN/GaN Heterostructures

被引：0

作者：

Stuchlikova, L. ^{[1
]}

Kosa, A. ^{[1
]}

Benkovska, J. ^{[1
]}

Benko, P. ^{[1
]}

Harmatha, L. ^{[1
]}

Kovac, J. ^{[1
]}

机构：

[1] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, Inst Elect & Photon, Ilkovicova 3, Bratislava 81219, Slovakia

来源：

2014 10TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES & MICROSYSTEMS (ASDAM) | 2014年

关键词：

HEMTS; TRAPS;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, the investigation of four types of Schottky-gate structures prepared by low-pressure metal-organic vapour phase epitaxy on sapphire and 4H-SiC substrates, by the deep level transient Fourier spectroscopy is presented. Fifteen deep energy levels have been identified (activation energies: 0.12, 0.26, 0.28, 0.48, 0.50, 0.69, 0.72, 0.75, 0.76, 1.02, 1.23, 1.28, 1.35, 1.57, 1.58 eV). The correlation between deep levels observed on different structure types is discussed.

引用

页码：185 / 188

页数：4

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