Development of novel semiconductor devices

被引：0

作者：

Dobrzanski, L ^{[1
]}

机构：

[1] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

来源：

MIKON-98: 12TH INTERNATIONAL CONFERENCE ON MICROWAVES & RADAR, VOLS 1-4 | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Physical background of novel small-scale fast semiconductor devices has been presented. Performance constrains of hot electron and quantum devices have been discussed. Prospects of development and application of these devices has been indicated. Experimental structures studied at the Institute of Electronic Materials Technology and technologies needed for their realisation have been presented.

引用

页码：747 / 751

页数：5

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