Modeling of Planar 2D/3D Semiconductor Heterostructures Based on MoS2/GaN Junction

被引：0

作者：

Botsula, Oleg ^{[1
]}

Prykhodko, Kyrylo ^{[1
]}

Zozulia, Valerii ^{[1
]}

机构：

[1] Kharkov Natl Univ, Sch Radiophys Biomed Elect & Comp Syst, Kharkiv, Ukraine

来源：

2022 IEEE 2ND UKRAINIAN MICROWAVE WEEK, UKRMW | 2022年

关键词：

two-dimensional(2D) layer; heterojunction; electron transfer; phonon scattering; current density; I-V-characteristic; ELECTRONS;

D O I：

10.1109/UKRMW58013.2022.10037030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Modeling results of planar 2D/3D semiconductor heterostructure based on GaN/MoS2 junction are presented. The heterostructure represents a III-nitride based planar diode with length of 1.m. The diode has a GaN n-type channel and MoS2 layer placed at the bottom and connected to anode contact. Doping concentration in the channel is (1-6)center dot 10(22)m(-3). Model of electron exchange between 2D and 3D regions of the diode is proposed. Electron transition between 2D and 3D region of diode is suggested to occur due to polar optical phonon scattering. Monte Carlo simulation of electron transport in device is carried out. Dependences of current density on applied voltage are obtained. Impact of parameters of MoS2 layers on current - voltage characteristic of diodes is discussed.

引用

页码：83 / 87

页数：5

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