Wide bandgap semiconductor power electronics

被引：11

作者：

Weitzel, CE ^{[1
]}

机构：

[1] Motorola Inc, Mat Res & Strateg Technol, Tempe, AZ 85284 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746244

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wide bandgap semiconductors, SiC and GaN, have attracted increased attention because of their potential for higher performance switching and RF power devices. SIC Schottky diodes, MOSFET's, SIT's and MESFET's and AlGaN/GaN HFET's are described and their performance compared to that of Si and GaAs devices.

引用

页码：51 / 54

页数：4

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