High-Performance, Wide-Bandgap Power Electronics

被引:11
|
作者
McNutt, Ty [1 ]
Passmore, Brandon [1 ]
Fraley, John [1 ]
Mcpherson, Brice [1 ]
Shaw, Robert [1 ]
Olejniczak, Kraig [1 ]
Lostetter, Alex [1 ]
机构
[1] Arkansas Power Elect Int Inc, Fayetteville, AR 72701 USA
关键词
Wide bandgap; silicon carbide; power electronics; power packaging; high temperature; high performance; high frequency; reliability; DEVICES;
D O I
10.1007/s11664-014-3376-y
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
APEI has developed high-performance electronics to exploit the unique capabilities of wide-bandgap devices. Crucial enabling features include high current density, fast switching speed, high-voltage (>10 kV) blocking, high-temperature operation (>200 degrees C), and inherent radiation tolerance, features which have the potential to completely revolutionize existing electronics, from milliwatt to megawatt levels, and enable operation in new environments. Full realization of these extraordinary capabilities led to significant challenges in package and system design, including high electric fields, high power density, high di/dt's and dv/dt's, and high temperatures. Because of the limitations of traditional design methods and traditional electronics, designers unknowingly lack understanding of packaging material thermal properties at temperature extremes, of package-fabrication techniques, and of the inability to operate continuously at elevated temperatures, and use a set of qualification standards designed for lower-temperature, previous generation technology.
引用
收藏
页码:4552 / 4559
页数:8
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