Spin-dependent tunneling through high-k LaAlO3 -: art. no. 212501

被引：25
|
作者：
Garcia, V
Bibes, M
Maurice, JL
Jacquet, E
Bouzehouane, K
Contour, JP
Barthélémy, A
机构：
[1] Univ Paris 06, Inst NanoSci Paris, CNRS, UMR 7588, F-75015 Paris, France
[2] Univ Paris 07, Inst NanoSci Paris, CNRS, UMR 7588, F-75015 Paris, France
[3] CNRS, Unite Mixte Phys, Domaine Corbeville, F-91404 Orsay, France
[4] Univ Paris 11, Inst Electron Fondamentale, F-91405 Orsay, France
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 21期
关键词：
D O I：
10.1063/1.2132526
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the use of the LaAlO3 (LAO) high-k dielectric as a tunnel barrier in magnetic tunnel junctions. From tunnel magnetoresistance (TMR) measurements on epitaxial La2/3Sr1/3MnO3/LAO/La2/3Sr1/3MnO3 junctions, we estimate a spin polarization of 77% at low temperature for the La2/3Sr1/3MnO3/LAO interface. Remarkably, the TMR of La2/3Sr1/3MnO3/LAO/Co junctions at low bias is negative, evidencing a negative spin polarization of Co at the interface with LAO, and its bias dependence is very similar to that of La2/3Sr1/3MnO3/SrTiO3/Co junctions. We discuss possible reasons for this behavior. (c) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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