Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1-xMgxO layers by molecular beam epitaxy

被引：3
|
作者：
Xia, Y. [1 ,2 ]
Brault, J. [1 ]
Nemoz, M. [1 ]
Teisseire, M. [1 ]
Vinter, B. [1 ,2 ]
Leroux, M. [1 ]
Chauveau, J. -M. [1 ,2 ]
机构：
[1] CNRS, CRHEA, F-06560 Valbonne, France
[2] Univ Nice Sophia Antipolis, F-06103 Nice, France
来源：
APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 26期
关键词：
LIGHT-EMITTING-DIODES; HIGH-POWER; GAN; FIELDS; SAPPHIRE; FILMS;
D O I：
10.1063/1.3673325
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nonpolar (11 (2) over bar0) Al0.2Ga0.8N/GaN multiple quantum wells (MQWs) have been grown by molecular beam epitaxy on (11 (2) over bar0) Zn0.74Mg0.26O templates on r-plane sapphire substrates. The quantum wells exhibit well-resolved photoluminescence peaks in the ultra-violet region, and no sign of quantum confined Stark effect is observed in the complete multiple quantum well series. The results agree well with flat band quantum well calculations. Furthermore, we show that the MQW structures are strongly polarized along the [0001] direction. The origin of the polarization is discussed in terms of the strain anisotropy dependence of the exciton optical oscillator strengths. (C) 2011 American Institute of Physics. [doi:10.1063/1.3673325]
引用
收藏
页数：3
相关论文
共 50 条
  • [1] Absorption and emission of (In,Ga)N/GaN quantum wells grown by molecular beam epitaxy
    Siozade, L
    Disseix, P
    Vasson, A
    Leymarie, J
    Damilano, B
    Grandjean, N
    Massies, J
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2001, 183 (01): : 139 - 143
  • [2] Properties of (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy
    Brandt, O
    Waltereit, P
    Dhar, S
    Jahn, U
    Sun, YJ
    Trampert, A
    Ploog, KH
    Taglient, MA
    Tapfer, L
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (04): : 1626 - 1639
  • [3] Impact of In content on the structural and optical properties of (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy
    Waltereit, P
    Speck, JS
    GAN AND RELATED ALLOYS-2001, 2002, 693 : 3 - +
  • [4] Characterization of a-plane GaN/(Al,Ga)N multiple quantum wells grown via metalorganic chemical vapor deposition
    Craven, Michael D.
    Waltereit, Patrick
    Wu, Feng
    Speck, James S.
    DenBaars, Steven P.
    Japanese Journal of Applied Physics, Part 2: Letters, 2003, 42 (3 A):
  • [5] Characterization of a-plane GaN/(Al,Ga)N multiple quantum wells grown via metalorganic chemical vapor deposition
    Craven, MD
    Waltereit, P
    Wu, F
    Speck, JS
    DenBaars, SP
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (3A): : L235 - L238
  • [6] Interface Recombination in Ga- and N-Polar GaN/(Al,Ga)N Quantum Wells Grown by Molecular Beam Epitaxy
    Auzelle, T.
    Sinito, C.
    Laehnemann, J.
    Gao, G.
    Flissikowski, T.
    Trampert, A.
    Fernandez-Garrido, S.
    Brandt, O.
    PHYSICAL REVIEW APPLIED, 2022, 17 (04)
  • [7] Optical properties of Zn1-xMgxO nanorods using catalysis-driven molecular beam epitaxy
    Heo, YW
    Kaufman, M
    Pruessner, K
    Norton, DP
    Ren, F
    Chisholm, MF
    Fleming, PH
    SOLID-STATE ELECTRONICS, 2003, 47 (12) : 2269 - 2273
  • [8] Properties of nonpolar a-plane InGaN/GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN
    Chakraborty, A
    Keller, S
    Meier, C
    Haskell, BA
    Keller, S
    Waltereit, P
    DenBaars, SP
    Nakamura, S
    Speck, JS
    Mishra, UK
    APPLIED PHYSICS LETTERS, 2005, 86 (03) : 1 - 3
  • [9] Optical and structural properties of AlGaN/GaN quantum wells grown by molecular beam epitaxy
    Grandjean, N
    Massies, J
    Leroux, M
    Laügt, M
    Lefebvre, P
    Gil, B
    Allègre, J
    Bigenwald, P
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4
  • [10] On overannealing of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy
    Liu, H. F.
    Chua, S. J.
    Xiang, N.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (01)
12345