Characterization of a-plane GaN/(Al,Ga)N multiple quantum wells grown via metalorganic chemical vapor deposition

被引：0
|
作者：
Craven, Michael D. [1 ]
Waltereit, Patrick [1 ]
Wu, Feng [1 ]
Speck, James S. [1 ]
DenBaars, Steven P. [1 ]
机构：
[1] Materials Department, University of California, Santa Barbara, CA 93106-5050, United States
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2003年 / 42卷 / 3 A期
关键词：
D O I：
10.1143/jjap.42.l235
中图分类号：
学科分类号：
摘要：
Semiconductor quantum wells
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