Characterization of a-plane GaN/(Al,Ga)N multiple quantum wells grown via metalorganic chemical vapor deposition

被引：0
|
作者：
Craven, Michael D. [1 ]
Waltereit, Patrick [1 ]
Wu, Feng [1 ]
Speck, James S. [1 ]
DenBaars, Steven P. [1 ]
机构：
[1] Materials Department, University of California, Santa Barbara, CA 93106-5050, United States
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2003年 / 42卷 / 3 A期
关键词：
D O I：
10.1143/jjap.42.l235
中图分类号：
学科分类号：
摘要：
Semiconductor quantum wells
引用
收藏
相关论文
共 50 条
  • [21] Effects of carrier gas on the stress of a-plane GaN films grown on r-plane sapphire substrates by metalorganic chemical vapor deposition
    Li, DS
    Chen, H
    Yu, HB
    Han, YJ
    Zheng, XH
    Huang, Q
    Zhou, JM
    JOURNAL OF CRYSTAL GROWTH, 2004, 263 (1-4) : 76 - 79
  • [22] Photoluminescence of GaAlAs/GaAs quantum wells grown by metalorganic chemical vapor deposition
    Song, XW
    Qu, Y
    Li, M
    Gao, X
    Li, XQ
    Zhang, XD
    ELECTRO-OPTIC AND SECOND HARMONIC GENERATION MATERIALS, DEVICES, AND APPLICATIONS II, 1998, 3556 : 170 - 172
  • [23] Transmission spectra of InGaN single quantum wells and InGaN GaN heterostructures grown by metalorganic chemical vapor deposition
    Kim, JW
    Park, YK
    Kim, YT
    Son, CS
    Choi, IH
    Ambacher, O
    Stutzmann, M
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 (01) : 42 - 45
  • [24] Optical and structural properties of the high in content InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition
    Cheong, MG
    Choi, RJ
    Kim, CS
    Yoon, HS
    Cho, HK
    Hong, CH
    Suh, EK
    Lee, HJ
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2001, 39 : S493 - S498
  • [25] Intersubband Transitions in GaN/Al0.5Ga0.5N Quantum Wells on a-Plane and m-Plane GaN Substrates
    Xu, Jiaming
    Monavarian, Morteza
    Nookala, Nishant
    Fireman, Micha N.
    Qwah, K. S.
    Speck, James S.
    Belkin, Mikhail A.
    2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2020,
  • [26] Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition
    Zhao, D. G.
    Jiang, D. S.
    Le, L. C.
    Wu, L. L.
    Li, L.
    Zhu, J. J.
    Wang, H.
    Liu, Z. S.
    Zhang, S. M.
    Jia, Q. J.
    Yang, Hui
    JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 540 : 46 - 48
  • [27] Effect of Al doping in GaN films grown by metalorganic chemical vapor deposition
    Lee, JH
    Hahm, SH
    Lee, JH
    Bae, SB
    Lee, KS
    Cho, YH
    Lee, JL
    APPLIED PHYSICS LETTERS, 2003, 83 (05) : 917 - 919
  • [28] CHARACTERIZATION OF SINGLE QUANTUM-WELLS ON GAAS/SI GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    EGAWA, T
    GEORGE, T
    JIMBO, T
    UMENO, M
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (02) : 150 - 152
  • [29] Characteristics of indium incorporation in InGaN/GaN multiple quantum wells grown on a-plane and c-plane GaN
    Song, Keun-Man
    Kim, Jong-Min
    Kang, Bong-Kyun
    Yoon, Dae-Ho
    Kang, S.
    Lee, Sang-Won
    Lee, Sung-Nam
    APPLIED PHYSICS LETTERS, 2012, 100 (21)
  • [30] Structural and optical characterization of GaN films grown by metalorganic chemical vapor deposition
    Yang, K
    Zhang, R
    Shen, B
    Qin, LH
    Chen, ZZ
    Zheng, YD
    Huang, ZC
    Chen, JC
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 923 - 926
12345