Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1-xMgxO layers by molecular beam epitaxy

被引：3

作者：

Xia, Y. ^{[1
,2
]}

Brault, J. ^{[1
]}

Nemoz, M. ^{[1
]}

Teisseire, M. ^{[1
]}

Vinter, B. ^{[1
,2
]}

Leroux, M. ^{[1
]}

Chauveau, J. -M. ^{[1
,2
]}

机构：

[1] CNRS, CRHEA, F-06560 Valbonne, France

[2] Univ Nice Sophia Antipolis, F-06103 Nice, France

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 26期

关键词：

LIGHT-EMITTING-DIODES; HIGH-POWER; GAN; FIELDS; SAPPHIRE; FILMS;

D O I：

10.1063/1.3673325

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonpolar (11 (2) over bar0) Al0.2Ga0.8N/GaN multiple quantum wells (MQWs) have been grown by molecular beam epitaxy on (11 (2) over bar0) Zn0.74Mg0.26O templates on r-plane sapphire substrates. The quantum wells exhibit well-resolved photoluminescence peaks in the ultra-violet region, and no sign of quantum confined Stark effect is observed in the complete multiple quantum well series. The results agree well with flat band quantum well calculations. Furthermore, we show that the MQW structures are strongly polarized along the [0001] direction. The origin of the polarization is discussed in terms of the strain anisotropy dependence of the exciton optical oscillator strengths. (C) 2011 American Institute of Physics. [doi:10.1063/1.3673325]

引用

页数：3

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