The electrical properties of Al/Ni/Ge/n-GaAs interfaces

被引：0

作者：

Davida, L

Kovacs, B

Mojzes, I

Kincses, Z

Dobos, L

机构：

[1] Kando Kalman Polytech, Inst Microelect & Technol, H-1084 Budapest, Hungary

[2] Tech Univ Budapest, Dept Elect Technol, H-1521 Budapest, Hungary

[3] Tu Budapest Z Bay Fdn Appl Res, Dept Elect Technol, H-1116 Budapest, Hungary

[4] Hungarian Acad Sci, Tech Phys Res Inst, H-1521 Budapest, Hungary

来源：

MICROELECTRONICS AND RELIABILITY | 1998年 / 38卷 / 05期

关键词：

D O I：

10.1016/S0026-2714(97)00218-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An Al(130 nm)/Ni(30 nm)/Ge(40 nm) layer deposited onto n-type GaAs by thermal evaporation was electrically studied. The electrical properties of these contacts were characterized by current-voltage curves and contact noise measurements. The samples have been annealed for different times at different temperatures in flowing forming gas, H-2:N-2 (50%:95%), in a tube furnace. The I-V characteristics of the AlNiGe samples annealed at different temperatures show Schottky character. The I-V plots of the samples that had high noise indexes show a double slope structure. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：787 / 793

页数：7

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