Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures

被引：160
|
作者：
Hudait, MK
Venkateswarlu, P
Krupanidhi, SB
机构：
[1] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India
[2] ISRO, Satellite Ctr, Solar Panels Div, Bangalore 560017, Karnataka, India
来源：
SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 01期
关键词：
GaAS; Schottky diodes; MOVPE; Ge;
D O I：
10.1016/S0038-1101(00)00230-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The current-voltage characteristics of Au/n-GaAs Schottky diodes grown by metal-organic vapor-phase epitaxy on Ge substrates were determined in the temperature range 80-300 K. The zero-bias barrier height for current transport decreases and the ideality factor increases at low temperatures. The ideality factor was found to show the T-o effect and a higher characteristic energy. The excellent matching between the homogeneous barrier height and the effective barrier height was observed and infer good quality of the GaAs him. No generation-recombination current due to deep levels arising during the GaAs/Ge heteroepitaxy was observed in this study, The value of the Richardson constant was found to be 7.04 A K-2 cm(-2), which is close to the value used for the determination of the zero-bias barrier height. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：133 / 141
页数：9
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