Semiconductor nanostructures for microwave and terahertz radiation detection

被引：0

作者：

Asmontas, S. ^{[1
]}

Gradauskas, J. ^{[1
]}

Nargeliene, V. ^{[1
]}

Paskevic, C. ^{[1
]}

Suziedelis, A. ^{[1
]}

Sirmulis, E. ^{[1
]}

机构：

[1] Ctr Phys Sci & Technol, Inst Semicond Phys, LT-01108 Vilnius, Lithuania

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

关键词：

Modulation doped structure; microwave detection; pseudomorphic modulation doped structure;

D O I：

10.1063/1.3666665

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present experimental results of microwave and terahertz radiation detection by planar diode having asymmetrically necked structure. MBE grown modulation doped AlGaAs/GaAs as well as AlGaAs/InGaAs/GaAs structures are used for fabrication of the planar diodes. Voltage power characteristics of the diode are measured in frequency range from 10 GHz up to 3 THz. It is found that the voltage sensitivity of the planar diode does not change from 10 GHz to 120 GHz, while at higher frequencies the sensitivity decreases due to frequency dependence of electron mobility in GaAs and InGaAs. Experimental results demonstrate that voltage sensitivity of planar diode increases with drop of lattice temperature due to increase of both electron mobility and electron energy relaxation time. At liquid nitrogen temperature the voltage sensitivity is observed to be by two orders of magnitude higher than at room temperature.

引用

页数：2

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