Detection of microwave radiation on porous silicon nanostructures

被引：0
|
作者：
Gradauskas, J. [1 ,2 ]
Stupakova, J. [2 ]
Suziedelis, A. [1 ,2 ]
Samuoliene, N. [2 ]
机构：
[1] Ctr Phys Sci & Technol, Gostauto 11, LT-01108 Vilnius, Lithuania
[2] Vilnius Gediminas Tech Univ, LT-10223 Vilnius, Lithuania
来源：
EIGHTH INTERNATIONAL CONFERENCE ON ADVANCED OPTICAL MATERIALS AND DEVICES (AOMD-8) | 2014年 / 9421卷
关键词：
porous silicon; microwaves; detection; hot carriers; point contact; MOS structure;
D O I：
10.1117/12.2083575
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on possibility to detect pulsed microwave radiation across the metal/oxide/porous silicon structures and analyse possible physical reasons causing the rise of the emf voltage signal. The n-type porous layers were fabricated according to conventional electrochemical etching procedure, and were exposed to pulsed 10 GHz microwave radiation. The results of investigation show that the porous Si samples have higher by at least one order voltage-to-power sensitivity than the samples without the porous layer, and are considered to have high potential to increase it further. Free carrier heating phenomenon is considered to be responsible for the signal formation.
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页数：4
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