Nonlinear terahertz spectroscopy of semiconductor nanostructures

被引:0
|
作者
C. Luo
K. Reimann
M. Woerner
T. Elsaesser
机构
[1] National Chiao Tung University,Department of Electrophysics
[2] Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie,undefined
来源
Applied Physics A | 2004年 / 78卷
关键词
Spectroscopy; Frequency Conversion; Nonlinear Frequency; Rabi Oscillation; Semiconductor Nanostructures;
D O I
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中图分类号
学科分类号
摘要
Nonlinear frequency conversion and electro-optic sampling allow for the generation and phase-resolved characterization of few-cycle pulses in the frequency range up to 50 THz. Electric field transients with amplitudes of up to several MV/cm are applied to study coherent nonlinear excitations of low-dimensional semiconductors. We report the first observation of Rabi oscillations on intersubband transitions of electrons in GaAs/AlGaAs quantum wells. Frequency and phase of such oscillations are controlled in the 0.3- to 2.5-THz range via the strength and shape of the mid-infrared driving pulse.
引用
收藏
页码:435 / 440
页数:5
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