Modular Framework for Molecular-FET Device-to-Circuit Modeling

被引:0
|
作者
Zahir, Ali [1 ]
Pulimeno, Azzurra [1 ]
Demarchi, Danilo [1 ]
Graziano, Mariagrazia [1 ,3 ]
Piccinini, Gianluca [1 ]
Mahmoud, Ahmed [2 ]
Lugli, Paolo [2 ]
机构
[1] Politecn Torino, Dept Elect & Telecommun, Corso Duca Abruzzi 24, Turin, Italy
[2] Tech Univ Munich, Inst Nanoelect, Dept Elect Engn & Informat Technol, D-80290 Munich, Germany
[3] UCL, Dept Phys & Astron, London Ctr Nanotechnol, London, England
关键词
Molecular Transistor; Modular Framework; Circuits and Architecture; Logic circuits;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Recently, several molecular devices have been realized with interesting properties like conductance, switching, gate modulation and negative differential resistance. In this paper we present a new modular framework based on VHDL-AMS that allows a comparison among different Molecular-FET models in terms of capability to capture an accurate I-V characteristics. It also allows to analyze the impact of Molecular-FET and to inspect the circuit proper behavior and its possible use in an architecture organized as a cascade of basic crossbars. This comparison exhibits technological choices, capability of different models features to capture physical quantities and models computational efforts.
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页码:156 / 159
页数:4
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