Modular Framework for Molecular-FET Device-to-Circuit Modeling

被引：0

作者：

Zahir, Ali ^{[1
]}

Pulimeno, Azzurra ^{[1
]}

Demarchi, Danilo ^{[1
]}

Graziano, Mariagrazia ^{[1
,3
]}

Piccinini, Gianluca ^{[1
]}

Mahmoud, Ahmed ^{[2
]}

Lugli, Paolo ^{[2
]}

机构：

[1] Politecn Torino, Dept Elect & Telecommun, Corso Duca Abruzzi 24, Turin, Italy

[2] Tech Univ Munich, Inst Nanoelect, Dept Elect Engn & Informat Technol, D-80290 Munich, Germany

[3] UCL, Dept Phys & Astron, London Ctr Nanotechnol, London, England

来源：

2015 IEEE 15TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | 2015年

关键词：

Molecular Transistor; Modular Framework; Circuits and Architecture; Logic circuits;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recently, several molecular devices have been realized with interesting properties like conductance, switching, gate modulation and negative differential resistance. In this paper we present a new modular framework based on VHDL-AMS that allows a comparison among different Molecular-FET models in terms of capability to capture an accurate I-V characteristics. It also allows to analyze the impact of Molecular-FET and to inspect the circuit proper behavior and its possible use in an architecture organized as a cascade of basic crossbars. This comparison exhibits technological choices, capability of different models features to capture physical quantities and models computational efforts.

引用

下载

页码：156 / 159

页数：4

共 50 条

[41] Gate-All-Around FET Based 6T SRAM Design Using a Device-Circuit Co-Optimization Framework
Wang, Luhao
Shafaei, Alireza
Pedram, Massoud
2017 IEEE 60TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), 2017, : 1113 - 1116
[42] DEVICE AND CIRCUIT MODELING OF GAAS-BASED TRANSISTORS
SHUR, M
FJELDLY, T
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 21 - 28
[43] NUMERICAL DEVICE MODELING FOR ELECTRONIC-CIRCUIT SIMULATION
YANILMAZ, M
EVELEIGH, V
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1991, 10 (03) : 366 - 375
[44] THE THERMAL MODELING OF INTEGRATED-CIRCUIT DEVICE PACKAGES
BARGADDA, R
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (09) : 1934 - 1938
[45] PROCESS MODELING OF INTEGRATED-CIRCUIT DEVICE TECHNOLOGY
DUTTON, RW
HANSEN, SE
PROCEEDINGS OF THE IEEE, 1981, 69 (10) : 1305 - 1320
[46] MODELING ISSUES FOR ADVANCED BIPOLAR DEVICE CIRCUIT SIMULATION
FOSSUM, JG
PROCEEDINGS OF THE 1989 BIPOLAR CIRCUITS AND TECHNOLOGY MEETING, 1989, : 234 - 241
[47] Electromagnetic Modeling of Electronic Device by Electrical Circuit Parameters
De Moura, Diego
Raizer, Adroaldo
APPLIED COMPUTATIONAL ELECTROMAGNETICS SOCIETY JOURNAL, 2016, 31 (01): : 58 - 65
[48] MODELING OF LARGE-SIGNAL DEVICE CIRCUIT INTERACTIONS
GRUBIN, HL
KRESKOVSKY, JP
LEVY, R
PROCEEDINGS : IEEE/CORNELL CONFERENCE ON ADVANCED CONCEPTS IN HIGH SPEED SEMICONDUCTOR DEVICES AND CIRCUITS, 1989, : 33 - 45
[49] AN EFFICIENT OPTIMIZATION TECHNIQUE FOR MICROWAVE CIRCUIT AND DEVICE MODELING
BANDLER, JW
CHEN, SH
DAIJAVAD, S
MICROWAVE JOURNAL, 1986, 29 (05) : 94 - 94
[50] COMPUTER-AIDED CIRCUIT ANALYSIS AND DEVICE MODELING
PEDERSON, DO
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1971, SC 6 (04) : 144 - &

← 1 2 3 4 5 →