Semiconductor materials characterization and identification with THz radiation

Recently evolved THz technology opens up more possibilities for identification and characterization of different semiconductor crystal-based compounds. Since the THz waveform is essentially a direct manifestation of the crystal domain structure, the multicycle THz generation methods allow measuring of geometrical parameters of semiconductor internal structures as well as of dislocations and other structural defects. The above is useful for both characterization and identification of semiconductor materials. Further, methods of THz characterization of II-VI, III-V as well as tinary compounds are discussed. Computational techniques are suggested allowing the noise level reduction for the measurements.