Aggressive Equivalent Oxide Thickness of ∼0.7 nm on Si0.8Ge0.2 Through HfO2 Dielectric Direct Deposition

被引：1

作者：

Lee, Meng-Chien ^{[1
,2
]}

Zhao, Yi-Yang ^{[1
,2
]}

Chen, Wei-Lun ^{[1
,2
]}

Wang, Shin-Yuan ^{[1
,2
]}

Chen, Yi-Xuan ^{[1
,2
]}

Luo, Guang-Li ^{[3
]}

Chien, Chao-Hsin ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan

[3] Natl Nano Device Labs, Hsinchu 30078, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 10期

关键词：

Equivalent oxide thickness; high-kappa direct deposition; Si0.8Ge0.2; MOSCAPs; MOS; STATE;

D O I：

10.1109/LED.2022.3203016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study demonstrated the ultralow equivalent oxide thickness (EOT) value of 0.72 nm and the high-quality high-kappa/Si0.8Ge0.2 interface on p-type Si0.8Ge0.2 with direct deposition of HfO2. The ultrathin interfacial layer (IL) thickness of similar to 0.4 nm was observed in the high-resolution transmission electron microscope (HRTEM) images. The high-quality interfacemight result fromthe high-kappa/Si0.8Ge0.2 interfacemainly consisting of the higher Si oxidation states, verified by X-ray photoelectron spectroscopy (XPS). Thus, this study refutes the necessity of IL formation and paves the way for low-EOT Si0.8Ge0.2 devices.

引用

页码：1605 / 1608

页数：4

共 30 条

[1] Demonstration of HfO2-Based Gate Dielectric With ∼0.8-nm Equivalent Oxide Thickness on Si0.8Ge0.2 by Trimethylaluminum Pre-Treatment and Al Scavenger
Lee, Meng-Chien
Chen, Wei-Lun
Zhao, Yi-Yang
Wang, Shin-Yuan
Luo, Guang-Li
Chien, Chao-Hsin
[J]. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2023, 11 : 274 - 281
[2] HfO2 gate dielectric with 0.5 nm equivalent oxide thickness
Harris, H
Choi, K
Mehta, N
Chandolu, A
Biswas, N
Kipshidze, G
Nikishin, S
Gangopadhyay, S
Temkin, H
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (06) : 1065 - 1067
[3] Effects of annealing temperature on the characteristics of solicate/HfO2 insulator formed on the p-Si/Si0.8Ge0.2 and p-Si/Si0.8Ge0.2/intrinsic-Si (20A) substrates
Jeong, SH
Roh, Y
Lee, NE
Yang, CW
[J]. SURFACE & COATINGS TECHNOLOGY, 2005, 200 (1-4): : 258 - 263
[4] Electrical Properties of high-k ALD HfO2 deposited on strained Si Layers Epitaxially grown on Si0.8Ge0.2/Si Substrates
Shrestha, Pragya
Gu, Diefeng
Tapily, Kandabara
Baumgart, Helmut
[J]. ATOMIC LAYER DEPOSITION APPLICATIONS 4, 2008, 16 (04): : 51 - 58
[5] Post deposition annealing effects on the reliability of ALD HFO2 films on strained-Si0.8Ge0.2 layers
Tzeng, PJ
Maikap, S
Lai, WZ
Liang, CS
Chen, PS
Lee, LS
Liu, CW
[J]. IPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS, 2004, : 29 - 32
[6] High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8 nm equivalent oxide thickness
Barth, Michael
Rayner, G. Bruce, Jr.
McDonnell, Stephen
Wallace, Robert M.
Bennett, Brian R.
Engel-Herbert, Roman
Datta, Suman
[J]. APPLIED PHYSICS LETTERS, 2014, 105 (22)
[7] Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics
Liu, Chuan-Hsi
Chen, Hung-Wen
Chen, Shung-Yuan
Huang, Heng-Sheng
Cheng, Li-Wei
[J]. APPLIED PHYSICS LETTERS, 2009, 95 (01)
[8] Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO2 dielectric -: art. no. 051922
Lu, N
Bai, W
Ramirez, A
Mouli, C
Ritenour, A
Lee, ML
Antoniadis, D
Kwong, DL
[J]. APPLIED PHYSICS LETTERS, 2005, 87 (05)
[9] Interfacial characteristics of HfO2 films grown on strained Si0.7Ge0.3 by atomic-layer deposition
Cho, MH
Chang, HS
Moon, DW
Kang, SK
Min, BK
Ko, DH
Kim, HS
McIntyre, PC
Lee, JH
Ku, JH
Lee, NI
[J]. APPLIED PHYSICS LETTERS, 2004, 84 (07) : 1171 - 1173
[10] Indium Aluminum Zinc Oxide Phototransistor With HfO2 Dielectric Layer Through Atomic Layer Deposition
Cheng, T. H.
Chang, S. P.
Cheng, Y. C.
Chang, S. J.
[J]. IEEE SENSORS JOURNAL, 2020, 20 (04) : 1838 - 1842

← 1 2 3 →