Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO2 dielectric -: art. no. 051922

被引：114
|
作者：
Lu, N
Bai, W
Ramirez, A
Mouli, C
Ritenour, A
Lee, ML
Antoniadis, D
Kwong, DL
机构：
[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA
[2] Adv Micro Devices Inc, Austin, TX 78741 USA
[3] Micron Technol Inc, Boise, ID 83707 USA
[4] MIT, Microsyst Technol Lab, Cambridge, MA 02139 USA
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 05期
关键词：
D O I：
10.1063/1.2001757
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a study on Ge diffusion and its impact on the electrical properties of TaN/HfO2/Ge metal-oxide-semiconductor (MOS) device. It is found that Ge diffusion depends on the amount of GeO2 formed at the HfO2/Ge interface and can be retarded by surface nitridation. It is speculated that Ge diffusion is in the form of GeO or Ge-riched HfGeO. Effective suppression of Ge diffusion by NH3 nitridation has resulted in improved electrical properties of TaN/HfO2/Ge MOS device, including equivalent oxide thickness (EOT), leakage current, hysteresis, and interface state density. The degradation of leakage current after high temperature post metallization anneal (PMA) is found to be due to Ge diffusion. (c) 2005 American Institute of Physics.
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页数：3
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