Indium Aluminum Zinc Oxide Phototransistor With HfO2 Dielectric Layer Through Atomic Layer Deposition

Bottom-gate indium aluminum zinc oxide thin-film transistors (TFTs) are fabricated with a HfO2 dielectric layer using plasma enhanced atomic layer deposition (PEALD). The electrical properties and photoresponse are both affected by the method of post annealing. A device that is annealed at a temperature of less than 200 degrees C has a better Ion/Ioff of 1.71 x 10(8) and a lower subthreshold swing (S.S.) of only 0.21 V/dec. This demonstrates that proper annealing treatment increases the performance of the device. The photoresponse is also calculated. A TFT that is not annealed has a poor photoresponse and a lower rejection ratio. Annealing at a temperature of less than 200 degrees C gives a good photoresponse of 0.2 A/W and a high rejection ratio of 2.86 x 10(5). An IAZO TFT with a HfO2 dielectric layer that is deposited using PEALD is applicable in UV sensing technology.