Field mapping of semiconductor devices in a transmission electron microscope with nanometre scale resolution by off-axis electron holography and precession electron diffraction

被引：0
|
作者：
Cooper, David [1 ,2 ]
Bernier, Nicolas [1 ,2 ]
Rouviere, Jean-Luc [1 ,2 ]
机构：
[1] Univ Grenoble Alpes, F-38000 Grenoble, France
[2] CEA LETI, F-38054 Grenoble, France
来源：
2015 IEEE 15TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | 2015年
关键词：
Off-axis electron holography; dopant mapping; strain mapping; precession diffraction; semiconductors;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is necessary to understand the distribution of the electrostatic potentials and strain fields in semiconductor devices in order to improve their performance. In this paper we will present results showing active dopant mapping that have been obtained on state-of-the-art devices obtained by off-axis electron holography. We will also present a range of different techniques that can be used to map the strain in these devices with nm-scale resolution.
引用
收藏
页码：777 / 780
页数：4
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