Physics-based exact analytical drain current equation and optimized compact model for long channel MOS transistors

被引：0
|
作者：
Jie, BB [1 ]
Sah, CT [1 ]
机构：
[1] Univ Florida, Dept Elect & Comp Engn, Florida Solid State Elect Lab, Gainesville, FL 32611 USA
来源：
2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An exact analytical formula of DC drain current versus gate and drain voltages is derived for MOS transistors with constant channel-impurity-concentration based on device physics. From this exact analytical formula, a compact model for long-channel MOS transistors is derived. The compact model is optimized over wide ranges of transistor properties by least-square-fit to numerical I-V data from the exact analytical formula. The optimized compact model has only one parameter to least-square-fit experimental data. The exact analytical formula and the compact model are verified numerically by I-V values calculated from the exact Pao-Sah double-integral formula.
引用
收藏
页码：941 / 945
页数：5
相关论文
共 50 条
  • [41] A Comprehensive Physics-Based Compact Model for CNT Thin Film Transistors- Part II: Ohmic Contact
    Tripathy, Srijeet
    Kumari, Ambika
    Bhattacharyya, Tarun Kanti
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (09) : 5717 - 5724
  • [42] A Comprehensive Physics-Based Compact Model for CNT Thin Film Transistors-Part I: Schottky Contact
    Tripathy, Srijeet
    Kumari, Ambika
    Bhattacharyya, Tarun Kanti
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (09) : 5709 - 5716
  • [43] MOS3: A New Physics-Based Explicit Compact Model for Lightly Doped Short-Channel Triple-Gate SOI MOSFETs
    Kloes, Alexander
    Schwarz, Mike
    Holtij, Thomas
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (02) : 349 - 358
  • [44] Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors
    Tsormpatzoglou, A.
    Hastas, N. A.
    Choi, N.
    Mahmoudabadi, F.
    Hatalis, M. K.
    Dimitriadis, C. A.
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (18)
  • [45] Physics based Compact Model for Drain Current in Fin-Shaped GaN MIS-HEMTs
    Sruthi, M. P.
    Shanbhag, Ajay
    Chakravorty, Anjan
    DasGupta, Nandita
    DasGupta, Amitava
    2021 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS), 2021,
  • [46] Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistors
    Zhihao Ding
    Guangxi Hu
    Ran Liu
    Lingli Wang
    Shuyan Hu
    Xing Zhou
    Journal of the Korean Physical Society, 2013, 62 : 1188 - 1193
  • [47] A physics-based short-channel SOI MOSFET model for fully-depleted single drain and LDD devices
    Chyau, CG
    Jang, SL
    Sheu, CJ
    SOLID-STATE ELECTRONICS, 2000, 44 (03) : 487 - 499
  • [48] Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistors
    Ding, Zhihao
    Hu, Guangxi
    Liu, Ran
    Wang, Lingli
    Hu, Shuyan
    Zhou, Xing
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2013, 62 (08) : 1188 - 1193
  • [49] A physics-based current–voltage model for organic solar cells using a combined analytical and regression approach
    M. L. Inche Ibrahim
    Applied Physics A, 2023, 129
  • [50] 2D Physics-based Compact Model for Channel Length Modulation in Lightly Doped DG FETs
    Weidemann, Michaela
    Kloes, Alexander
    Schwarz, Mike
    Iniguez, Benjamin
    MIXDES 2009: PROCEEDINGS OF THE 16TH INTERNATIONAL CONFERENCE MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2009, : 387 - +
12345