Physics-based exact analytical drain current equation and optimized compact model for long channel MOS transistors

被引：0
|
作者：
Jie, BB [1 ]
Sah, CT [1 ]
机构：
[1] Univ Florida, Dept Elect & Comp Engn, Florida Solid State Elect Lab, Gainesville, FL 32611 USA
来源：
2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An exact analytical formula of DC drain current versus gate and drain voltages is derived for MOS transistors with constant channel-impurity-concentration based on device physics. From this exact analytical formula, a compact model for long-channel MOS transistors is derived. The compact model is optimized over wide ranges of transistor properties by least-square-fit to numerical I-V data from the exact analytical formula. The optimized compact model has only one parameter to least-square-fit experimental data. The exact analytical formula and the compact model are verified numerically by I-V values calculated from the exact Pao-Sah double-integral formula.
引用
收藏
页码：941 / 945
页数：5
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