Low temperature simulation of SiGe ECL circuit

被引：0
|
作者：
Amon, S
Sokolic, S
机构：
来源：
PROCEEDINGS OF THE FOURTH SYMPOSIUM ON LOW TEMPERATURE ELECTRONICS AND HIGH TEMPERATURE SUPERCONDUCTIVITY | 1997年 / 97卷 / 02期
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中图分类号：
O69 [应用化学];
学科分类号：
081704 ;
摘要：
Low temperature simulation of SiGe HBT ECL circuit is presented. Numerical simulation is performed with Heterojunction Device and Circuit Analysis Advanced Application Modules in general purpose 2D device simulator MEDICI. The results of this work demonstrate that MEDICI can be a useful tool for several advanced simulation tasks, which cannot be performed by more specialized simulators. Implementation of more accurate, temperature dependent models for SiGe base transport properties will result in a powerful tool for simulation and optimization of SiGe devices and circuits.
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页码：279 / 286
页数：8
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