Chemically amplified deep-ultraviolet photoresist

被引：0
|
作者：
Reichmanis, E
机构：
[1] Lucent Technol, Mat & Proc Res Lab, Polymer & Organ Mat Res, Murray Hill, NJ 07974 USA
[2] Olin Microelect Mat Inc, E Providence, RI 02914 USA
来源：
ADVANCED MATERIALS & PROCESSES | 1996年 / 150卷 / 03期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：41 / 42
页数：2
相关论文
共 50 条
  • [41] Deep-ultraviolet scatterometry for nanoparticle detection
    Buckner, BD
    Hirleman, ED
    PROCESS CONTROL AND DIAGNOSTICS, 2000, 4182 : 231 - 241
  • [42] Deep-Ultraviolet Biomolecular Imaging and Analysis
    Kumamoto, Yasuaki
    Taguchi, Atsushi
    Kawata, Satoshi
    ADVANCED OPTICAL MATERIALS, 2019, 7 (05)
  • [43] Relationship between remaining solvent and acid diffusion in chemically amplified deep ultraviolet resists
    Itani, T
    Yoshino, H
    Hashimoto, S
    Yamana, M
    Samoto, N
    Kasama, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (12B): : 6501 - 6505
  • [44] Relationship between remaining solvent and acid diffusion in chemically amplified deep ultraviolet resists
    Itani, Toshiro
    Yoshino, Hiroshi
    Hashimoto, Shuichi
    Yamana, Mitsuharu
    Samoto, Norihiko
    Kasama, Kunihiko
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (12 B): : 6347 - 6695
  • [45] Effect of developer temperature and normality on conventional and chemically amplified photoresist dissolution
    Mack, CA
    Maslow, MJ
    Byers, J
    LITHOGRAPHY FOR SEMICONDUCTOR MANUFACTURING, 1999, 3741 : 148 - 160
  • [46] Acid diffusion in a chemically amplified negative i-line photoresist
    Connolly, J
    Chen, KR
    Kwong, R
    Lawson, M
    Linehan, L
    Moreau, W
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2, 1998, 3333 : 1124 - 1131
  • [47] Processing effects on the dissolution properties of thin chemically amplified photoresist films
    Drygiannakis, D.
    Raptis, I.
    Patsis, G. P.
    Boudouvis, A.
    vanWerden, K.
    MICROELECTRONIC ENGINEERING, 2008, 85 (5-6) : 955 - 958
  • [48] A standard addition technique to quantify photoacid generation in chemically amplified photoresist
    Pawloski, AR
    Christian
    Nealey, PF
    CHEMISTRY OF MATERIALS, 2001, 13 (11) : 4154 - 4162
  • [49] Evaluation of a novel photoacid generator for chemically amplified photoresist with ArF exposure
    Asakura, T
    Yamato, H
    Hintermann, T
    Ohwa, M
    Advances in Resist Technology and Processing XXII, Pt 1 and 2, 2005, 5753 : 140 - 148
  • [50] Effect of surfactant-added developer on development of chemically amplified photoresist
    Kawada, S
    Tamai, Y
    Omae, S
    Ohmi, T
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2, 2000, 3999 : 717 - 725
12345