Effect of etch holes on the capacitance and pull-in voltage in MEMS tunable capacitors

被引:22
|
作者
Fang, Dong-Ming [1 ]
Li, Xiu-Han [1 ]
Yuan, Quan [1 ]
Zhang, Hai-Xia [1 ]
机构
[1] Peking Univ, Natl Key Lab Nano Micro Fabricat Technol, Inst Microelect, Beijing 100871, Peoples R China
基金
国家高技术研究发展计划(863计划); 中国博士后科学基金;
关键词
etch hole; tunable capacitor; MEMS; pull-in voltage; VARIABLE CAPACITORS; FABRICATION; DESIGN;
D O I
10.1080/00207217.2010.488911
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Microelectromechanical systems (MEMS) tunable capacitors, switches or actuators are widely applied in wireless communication systems. In the fabrication process etch holes are used to release the sacrificial layer with relatively large structures, which obviously affects the performance of devices. However, most researchers neglect this effect during their designing of the capacitors, switches or actuators. This article presents the theoretical calculation of the capacitance of tunable capacitors with etch holes, and analyses the deviation of the capacitance and pull-in voltage with different parameters such as the length of the plates w, the length of the etch holes wh, the air gap between the two plates d, and the number of the etch holes. To validate the theory in this article, a tunable capacitor was fabricated by surface micromachined technology. The theoretical results compare well with the experimental results.
引用
收藏
页码:1439 / 1448
页数:10
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